| 摘要 |
<p>The present invention is directed to a single crystal Czochralski-type silicon wafer, and a process for the preparation thereof, which has a non-uniform distribution of crystal lattice vacancies therein, the peak concentration being present in the wafer bulk between an imaginary central plane and a surface of the wafer, such that, upon being subjected to the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, the wafer forms oxygen precipitates in the wafer bulk and a thin or shallow precipitate-free zone near the wafer surface.</p> |
