SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME,申请号JP20020099217-传众专利搜索

发明名称	SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要	PROBLEM TO BE SOLVED: To realize a power-MOSFET using n-type drift layers and p-type drift layers and capable of reducing the ON-resistance. SOLUTION: A p-type base layer 5, a n-type source layer 6, a gate insulating film 7, and a gate electrode 8 constituting a MOSFET structure are formed in the region, where n-type drift layers 2, barrier insulating films 3, and p-type drift layers 4 are arranged alternately and repeatedly. COPYRIGHT: (C)2004,JPO
申请公布号	JP2003298053(A)	申请公布日期	2003.10.17
申请号	JP20020099217	申请日期	2002.04.01
申请人	TOSHIBA CORP	发明人	YAMAGUCHI SHOICHI;OMURA ICHIRO;SAITO WATARU;SHINOHE TAKASHI;OHASHI HIROMICHI
分类号	H01L27/088;H01L21/336;H01L21/8234;H01L27/04;H01L29/06;H01L29/772;H01L29/78;H01L29/786;H01L29/80;(IPC1-7):H01L29/78;H01L21/823	主分类号	H01L27/088
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