| 摘要 |
<p>A nonvolatile storage device has a nonvolatile memory unit (MARY0 to MARY3), a buffer unit (BMRY0 to BMRY3), and a control unit (CNT). The control unit (CNT) separately controls a first access processing between the outside and the buffer unit and a second access processing between the nonvolatile member unit and the buffer unit in accordance with an instruction from the outside. Since the control unit thus controls the accesses to the memory unit and buffer unit according to external instructions separately, it is possible, in parallel with the erasure operation of the nonvolatile memory unit, to set up the next write data in the buffer unit and to output storage information read out and written in the buffer unit temporarily at high speed like cache memory operation in accordance with an external instruction. Thus the overhead of data transfer for reading/writing data from/in the nonvolatile storage device is reduced.</p> |
