| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent diffusion of impurities into a silicide layer by using an amorphous silicon layer with big particle size. CONSTITUTION: A gate oxide layer(11) is formed on a silicon substrate(10). A buried contact polysilicon layer(12) is formed on the gate oxide layer. The buried contact polysilicon layer and the gate oxide layer are selectively etched by using the first mask. An amorphous silicon layer(14) is formed on the resultant structure. A silicide layer(15) is formed on the amorphous silicon layer. A gate electrode is formed by selectively etching the silicide layer, the amorphous silicon layer, the buried contact polysilicon layer and the gate oxide layer using the second mask.
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