| 摘要 |
<p>PURPOSE: A semiconductor power module and a method for manufacturing the same are provided to be capable of improving thermal resistance by using material of a good heat releasing characteristic such as a DBC(Direct Bonding Copper) substrate instead of a heat sink, and simplifying manufacturing processes. CONSTITUTION: A semiconductor power module is provided with a DBC(Direct Bonding Copper) substrate(100) made of an insulating plate, a lower copper layer, and an upper copper layer having a pattern, a power device(130) attached on the upper copper layer, a power lead(120) connected to one side of the upper copper layer, a lead frame including a die pad and a control lead as one piece, electrically connected to the DBC substrate, a control device(150) attached to the die pad for controlling power device, an encapsulating part(180) for selectively enclosing the resultant structure. Preferably, the insulating plate is made of one selected from a group consisting of an alumina ceramic layer, a nitride aluminum layer, or an oxide beryllium layer.</p> |
