发明名称 |
P-n junction sensor |
摘要 |
A sensor including a p-n junction for subjecting under a reverse electrical bias. A conductive layer is formed across the p-n junction for providing an alternative conductive path across the p-n junction. The conductivity of the conductive layer in the presence of a selected substance in an atmosphere is different than in the absence of the selected substance, wherein the conductivity of the conductive layer is indicative of the presence or absence of the selected substance.
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申请公布号 |
US6627959(B1) |
申请公布日期 |
2003.09.30 |
申请号 |
US20020123900 |
申请日期 |
2002.04.16 |
申请人 |
BOSTON MICROSYSTEMS, INC. |
发明人 |
TULLER HARRY L.;MLCAK RICHARD |
分类号 |
G01N27/00;(IPC1-7):A01L29/76 |
主分类号 |
G01N27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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