发明名称 P-n junction sensor
摘要 A sensor including a p-n junction for subjecting under a reverse electrical bias. A conductive layer is formed across the p-n junction for providing an alternative conductive path across the p-n junction. The conductivity of the conductive layer in the presence of a selected substance in an atmosphere is different than in the absence of the selected substance, wherein the conductivity of the conductive layer is indicative of the presence or absence of the selected substance.
申请公布号 US6627959(B1) 申请公布日期 2003.09.30
申请号 US20020123900 申请日期 2002.04.16
申请人 BOSTON MICROSYSTEMS, INC. 发明人 TULLER HARRY L.;MLCAK RICHARD
分类号 G01N27/00;(IPC1-7):A01L29/76 主分类号 G01N27/00
代理机构 代理人
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