发明名称 |
Method for making semiconductor device |
摘要 |
A method for making a semiconductor device includes forming a resist pattern having a multi-layered structure by performing a plurality of development steps, the resist pattern including a first opening corresponding to a fine gate section of a gate electrode and a second opening placed on the first opening, the second opening corresponding to an over-gate section which is wider than the fine gate section and having a cross section protruding like an overhang, wherein every angle of the second opening at the tip of the over-gate section is more than 90 degrees; and forming the gate electrode provided with the fine gate section and the over-gate section by depositing electrode materials on the resist pattern.
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申请公布号 |
US6620716(B2) |
申请公布日期 |
2003.09.16 |
申请号 |
US20020114453 |
申请日期 |
2002.04.03 |
申请人 |
FUJITSU LIMITED;FUJITSU QUANTUM DEVICES LTD. |
发明人 |
MAKIYAMA KOZO;OGIRI KATSUMI |
分类号 |
G03F7/26;H01L21/027;H01L21/28;H01L21/285;H01L21/335;H01L21/338;H01L29/41;H01L29/423;H01L29/778;H01L29/812;(IPC1-7):H01L21/338 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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