发明名称 |
Insulating film formation method, semiconductor device, and production apparatus |
摘要 |
A method for forming an insulator film at a semiconductor temperature of 600° C. or less comprises the steps of forming a first insulator film by oxidizing a surface of a semiconductor in an atmosphere containing oxygen atom radicals, and forming a second insulator film on the first insulator film by deposition without exposing the first insulator film to outside air.
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申请公布号 |
US6620744(B2) |
申请公布日期 |
2003.09.16 |
申请号 |
US20020037558 |
申请日期 |
2002.01.04 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
NAKATA YUKIHIKO;ITOGA TAKASHI;OKAMOTO TETSUYA;HAMADA TOSHIMASA |
分类号 |
H01L21/316;H01L21/28;H01L21/31;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/49;H01L29/786;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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