| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for fabricating a III-nitrogen semiconductor device in which the service life of the device is prolonged by attaining a low specific contact resistance between a metal and a p-type III-nitrogen layer. <P>SOLUTION: Specific contact resistance between p-type III-nitrogen layers is lowered by an oxidation technology and a sulfidation technology. A p-type III-nitrogen layer sample is immersed into ammonium sulfide solution and the oxidation layer of the p-type III-nitrogen layer is removed. Subsequently, the sample is cleaned and dried, a metal layer is deposited on the surface of the p-type III-nitrogen layer, and then the sample is heat treated to form an ohmic contact between a metal and the p-type III-nitrogen layer. <P>COPYRIGHT: (C)2003,JPO |
