发明名称 |
In-situ measurement of wafer position on lower electrode |
摘要 |
A method and apparatus for measuring a wafer position on a lower electrode in a plasma etching device are disclosed herein. A wafer is generally placed on a lower electrode in a process chamber of a plasma etching device. Such a wafer (i.e., semiconductor wafer) generally comprises a front side and a back side. A differential pressure gradient between the front side and the back side of the wafer is determined, and thereafter, a position of the wafer on the lower electrode can be measured utilizing the differential pressure gradient.
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申请公布号 |
US2003168429(A1) |
申请公布日期 |
2003.09.11 |
申请号 |
US20020092977 |
申请日期 |
2002.03.07 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LAI YU-CHIH;CHANG CHENG-YI;CHEN SHIH-SHIURG |
分类号 |
H01L21/00;(IPC1-7):C23F1/00;G01L21/30 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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