发明名称 |
Plasma processing method for working the surface of semiconductor devices |
摘要 |
A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.
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申请公布号 |
US6617255(B2) |
申请公布日期 |
2003.09.09 |
申请号 |
US20010799485 |
申请日期 |
2001.03.07 |
申请人 |
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发明人 |
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分类号 |
H01L21/302;H01L21/3065;H01L21/311;H01L21/336;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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地址 |
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