SEMICONDUCTOR MEMORY ELEMENT AND MANUFACTURING METHOD THEREOF, IC CARD AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To improve performance of a ferroelectric memory and improve a manufacturing yield at the same time by realizing a ferroelectric thin film capacitor reduced in the variety of characteristics among memory cells. SOLUTION: A hydrogen leak pass layer and a hydrogen trap layer are connected to an electrode provided in the capacitor, in a semiconductor memory element employing the ferroelectric thin film as a memory capacitor. COPYRIGHT: (C)2003,JPO