| 摘要 |
<p>A vertical cavity surface emitting laser having a GaAs/AI(Ga)As DBR mirror over an InP layer. A first GaAs layer (126) is MOCVD grown on an InP layer (124) at a growth temperature of between 400 and 450 °C. Then, a second GaAs layer (128) is grown by MOCVD at a growth temperature of about 600 °C over the first GaAs layer (126). A GaAs/AI(Ga)As DBR mirror (132) is then grown over the second GaAs layer. Beneficially, an insulating layer (130) is disposed between the second GaAs layer (128) and the GaAs/AI(Ga)As DBR mirror (132). The insulating layer includes an opening (131) that exposes the second GaAs layer (128). Then, the GaAs/AI(Ga)As DBR mirror (132) is grown by lateral epitaxial overgrowth. The lower DBR (116) can be comprised of a material that provides an acceptable lattice match with InP layers. A tunnel junction can be formed over an InP active region.</p> |
