METHOD FOR FABRICATING NON-VOLATILE MEMORY DEVICE AND STRUCTURE THEREOF

摘要

PURPOSE: A method for fabricating a non-volatile memory(NVM) device is provided to prevent gate layers on a stack type gate structure from being damaged by forming the first spacer so that an oxide layer is prevented from changing through a gate oxidation process. CONSTITUTION: The first oxide layer(12), the first conductive layer(14), an interlayer dielectric and the second conductive layer(18) are sequentially formed on a semiconductor substrate(10) and are etched through a photolithography process to form a stack type gate structure having a floating gate and a control gate. The sidewall of the stack type gate electrode and the first spacer(30) for protecting the stack type gate structure are formed. The first insulation layer and the second insulation layer for decreasing stress are sequentially formed on the first spacer and the control gate through an oxidation process that recovers the oxide layer damaged in forming the stack type gate structure and prevents the floating gate and the control gate from being short-circuited. The second spacer(36) is formed on the side surface of the stack type gate structure including the second insulation layer to form a lightly-doped-drain(LDD) structure.