发明名称 |
Method for fabricating field-effect transistors in integrated semiconductor circuits and integrated semiconductor circuit fabricated with a field-effect transistor of this type including a dual gate |
摘要 |
A method for fabricating a field-effect transistor situated within an integrated semiconductor circuit. At least two gate regions each extending between a source region and a drain region and are disposed such that they lie one above the other in a thickness direction of a substrate, thereby reducing the space requirement of the hitherto customary larger field-effect transistors in integrated semiconductor circuits.
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申请公布号 |
US6613616(B2) |
申请公布日期 |
2003.09.02 |
申请号 |
US20010951241 |
申请日期 |
2001.09.12 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
ANGERMANN WOLFGANG;BAENISCH ANDREAS |
分类号 |
H01L29/41;H01L21/8234;H01L27/088;H01L29/78;(IPC1-7):H01L21/00;H01L21/336;H01L21/476;H01L21/84;H01L21/320 |
主分类号 |
H01L29/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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