| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electron emitting element into the electric field that provides a higher efficiency than the prior art, that can be made more consistently at a lower cost than the prior art, and that is more immune to environmental effects as well as the need for high vacuum environments typically required in the prior art, in a technology area of electron emitter into the electric field. <P>SOLUTION: An emitting element into the electric field is disclosed, which among other things may be used within an ultra-high density storage system. The emitting element includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky metal/ semiconductor junction or barrier. The Schottky metal/semiconductor barrier is formed on the emitter electrode and electrically coupled to the extractor electrode such that, when an electric potential is placed between the emitter electrode and the extractor electrode, an electron is emitted from the surface of an exposed semiconductor layer into the electric field. <P>COPYRIGHT: (C)2003,JPO</p> |
