发明名称 |
Semiconductor memory and its production process |
摘要 |
A semiconductor memory comprises: a first conductivity type semiconductor substrate and memory cells each constituted of an island-like semiconductor layer, a charge storage layer and a control gate, the charge storage layer and the control gate being formed to entirely or partially encircle a sidewall of the island-like semiconductor layer, wherein the memory cells are disposed in series, and the island-like semiconductor layer on which the memory cells are disposed has cross-sectional areas in a horizontal direction which vary stepwise.
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申请公布号 |
US2003157763(A1) |
申请公布日期 |
2003.08.21 |
申请号 |
US20020175259 |
申请日期 |
2002.06.20 |
申请人 |
ENDOH TETSUO;MASUOKA FUJIO;TANIGAMI TAKUJI;YOKOYAMA TAKASHI;TAKEUCHI NOBORU;WADA YOSHIHISA;SATO KOTA;KINOSHITA KAZUSHI |
发明人 |
ENDOH TETSUO;MASUOKA FUJIO;TANIGAMI TAKUJI;YOKOYAMA TAKASHI;TAKEUCHI NOBORU;WADA YOSHIHISA;SATO KOTA;KINOSHITA KAZUSHI |
分类号 |
G11C16/04;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/823 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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