| 摘要 |
The present invention relates to a method for fabricating a nitride read only memory (NROM), comprising: forming a doped polysilicon layer over a substrate, defining the doped polysilicon layer by using a patterned mask layer to form a plurality of doped polysilicon lines and expose a portion of the substrate. Afterwards, a thermal process is performed to form an oxide layer on the exposed substrate and sidewalls of the doped polysilicon lines. During the thermal process, the dopants are driven into the substrate to form a source/drain region, thus obtaining a plurality of bit lines including the doped polysilicon lines and the source/drain region. Following removal of the patterned mask layer, a self-aligned silicide layer is formed on the top surface of the bit lines. After removing the oxide layer, a silicon nitride stacked layer and a plurality of word lines are formed over the substrate.
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