| 摘要 |
PURPOSE:To use the common select signal line to enable to select many semiconductors, by using the depletion MOSFET to perform the select program. CONSTITUTION:When one of MOSFETs TR1 and TR2 is formed with an enhancement type MOSFET and the other is formed with a depletion type MOSFET, node 2 to which sources and drains are connected in series becomes the high-level power source voltage, the low-level ground potential, and so on according to selection of the FET, and semiconductor device select program signal Q is generated from exclusive OR circuit 8 to which the select signal is applied. By this constitution, the number of semiconductor devices to be selected is increased twice when the number of the select signals is increased, and the select line for each of semiconductor devices 11, 12... is not required, and semiconductors corresponding to devices 11, 12... are selected by common select lines 18 and 16 and so on, and thus, many semiconductors are selected simply and surely. |
