| 摘要 |
PURPOSE: To connect a semiconductor element well by maximizing the percentage of Au4 Al in an intermetallic compound when a wiring pattern and a bump are connected electrically and mechanically by forming the intermetallic compound through solid phase diffusion reaction caused by thermocompression. CONSTITUTION: An Al wiring pattern 2 is formed on the surface of an insulating board 1. A large number of gold bumps 4 are formed on the surface of a semiconductor element 3. The semiconductor element 3 is connected electrically and mechanically by forming an intermetallic compound, in the Al wiring pattern 2 on the insulating board 1, through solid phase diffusion reaction caused by thermocompression of the gold bump 4. The intermetallic compound has such composition as the percentage of Au4 Al is maximized. Since occurrence of crack and void due to thermal impact is prevented at the joint, a highly reliable mounting structure for semiconductor element is realized.
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