| 摘要 |
A semiconductor memory device is provided, which includes a chip enable buffer and an address buffer. The chip enable buffer generates first and second control signals having opposite phases of logic, the first and second control signals enable and disable operations of the semiconductor memory device, respectively. The address buffer includes an input terminal, and a blocking terminal connected to the input terminal, the input terminal receiving an external address signal under control of the first control signal, and the blocking terminal generating an address signal in response to the second control signal. The address buffer further includes a shift detecting circuit connected to the blocking terminal for generating first and second short pulses by detecting shift of the address signal, wherein the pluses are used as signals for reading data of the semiconductor memory device.
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