发明名称 |
Methods of patterning a multi-layer film stack and forming a lower electrode of a capacitor |
摘要 |
A process for forming a multilayer film stack including a noble metal electrode and a multilayer barrier. The process includes exposing the film stack to a plasma formed of reactive species from an excitable gas mixture of argon, a chlorine bearing gas, a fluorine bearing gas and a carbon bearing gas. The method of forming the lower electrode of a capacitor includes simultaneously etching a multilayer barrier and an electrode layer.
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申请公布号 |
US2003143803(A1) |
申请公布日期 |
2003.07.31 |
申请号 |
US20030358410 |
申请日期 |
2003.02.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ATHAVALE SATISH D.;COSTRINI GREG |
分类号 |
H01L21/02;H01L21/3213;H01L21/8242;H01L21/8246;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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