| 摘要 |
PURPOSE: A chemical mechanical polishing(CMP) apparatus is provided to improve the uniformity of a wafer by reducing the friction between a pad in an intaglio formation part and the wafer so that the polishing quantity of the wafer is controlled. CONSTITUTION: A wafer is mounted on a polishing pad of a disc type. A head holds the wafer and closely attaches the wafer to the upper surface of the polishing pad. A rotation axis rotates the head. A head axis supporting framework on which a head axis is mounted is capable of transferring in the back and forth direction. An intagliated structure is formed in a concentric circle separated from the center of the polishing pad by a predetermined interval by controlling the number, position and breadth of the intagliated structure according to the profile of the wafer and the state of a cross section and a surface material of the wafer before a polishing process.
|
