| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a resistive element having a contact portion with a high impurity concentration and a resistive portion with a low impurity concentration can be manufactured by one step of photo-engraving and two steps of impurity implantation. SOLUTION: A photoresist pattern 5 which has apertures in a contact portion 3 and a resistive portion 4 of a semiconductor substrate 1 is formed. By using the photoresist pattern 5 as a mask, impurities are implanted at a low concentration from a direction substantially perpendicular to the semiconductor substrate 1 to form a low concentration impurity region 6 in the contact portion 3 and the resistive portion 4. Impurities are implanted at a high concentration at an implantation angle tilted from the direction perpendicular to the semiconductor substrate 1. By shadowing the photoresist pattern 5, a high concentration impurity region 7 is formed in a contact formed region in the contact portion 3, and the high concentration impurity are not implanted in the resistive portion 4 so that the low concentration impurity region 6 remains. COPYRIGHT: (C)2003,JPO
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