发明名称 ELECTRON BEAM DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD THEREWITH
摘要 PROBLEM TO BE SOLVED: To perform the measurement and evaluation of a sample surface at high throughput and prevent upsizing, complexity, and a cost increase of a device. SOLUTION: This electron beam device for evaluating a sample 18 comprises a plurality of electron optical system, and the respective electron optical systems comprise objective lenses constituted of electrostatic lenses. To middle electrodes 28 and lower electrodes 16 of the objective lenses, voltage is applied from common control powers 28, 29, and to upper electrodes 14, voltage is applied from independently controlled power sources 27 provided on each of the electron optical systems. Thus, focusing can be independently controlled at the respective electron optical systems. The voltage of the power source 29 is set so as to be lower than that of a power supply 30 for the sample 18, thereby the energy filter effect of a secondary electron can be given and a potential contrast of a pattern on the sample can be evaluated. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003208868(A) 申请公布日期 2003.07.25
申请号 JP20020004531 申请日期 2002.01.11
申请人 EBARA CORP 发明人 NAKASUJI MAMORU;KATO TAKAO;NOMICHI SHINJI;SATAKE TORU
分类号 H01L21/66;H01J37/28;(IPC1-7):H01J37/28 主分类号 H01L21/66
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