发明名称 METHOD OF MANUFACTURING ELECTRON EMISSION ELEMENT, ELECTRON SOURCE, AND IMAGE FORMING DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an under-gate type electron emission element capable of increasing an efficiency by lowering an ineffective current flowing in a gate electrode and providing, with a high reproducibility, the electron emission element with a small beam diameter by preventing emission electrons from dispersing. <P>SOLUTION: An electron emission member 5 installed on the upper surface of a cathode electrode 4 is moved backward from the end part of the cathode electrode 4 on a side opposed to the gate electrode 2, and disposed by controlling the width of the a backward movement area. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003208845(A) 申请公布日期 2003.07.25
申请号 JP20020005697 申请日期 2002.01.15
申请人 CANON INC 发明人 KITAMURA SHIN;KUBOTA OICHI;SATO TAKAHIRO
分类号 H01J9/02;(IPC1-7):H01J9/02 主分类号 H01J9/02
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