发明名称 |
METHOD OF MANUFACTURING ELECTRON EMISSION ELEMENT, ELECTRON SOURCE, AND IMAGE FORMING DEVICE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an under-gate type electron emission element capable of increasing an efficiency by lowering an ineffective current flowing in a gate electrode and providing, with a high reproducibility, the electron emission element with a small beam diameter by preventing emission electrons from dispersing. <P>SOLUTION: An electron emission member 5 installed on the upper surface of a cathode electrode 4 is moved backward from the end part of the cathode electrode 4 on a side opposed to the gate electrode 2, and disposed by controlling the width of the a backward movement area. <P>COPYRIGHT: (C)2003,JPO</p> |
申请公布号 |
JP2003208845(A) |
申请公布日期 |
2003.07.25 |
申请号 |
JP20020005697 |
申请日期 |
2002.01.15 |
申请人 |
CANON INC |
发明人 |
KITAMURA SHIN;KUBOTA OICHI;SATO TAKAHIRO |
分类号 |
H01J9/02;(IPC1-7):H01J9/02 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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