发明名称 |
Photovoltaic device and making of the same |
摘要 |
The prevention of the deterioration of the minority carrier lifetime of a semiconductor substrate can be achieved by patterning the material of an impurity diffusion protecting layer on the surface of a semiconductor substrate by a making except a thermal oxidation process of the semiconductor substrate, for example by printing and firing paste material or by depositing paste material using a mask by CVD and forming a diffusion layer in the shape of an inverted pattern of the impurity diffusion protecting layer. Also, a low-priced photovoltaic device the photo-electric conversion efficiency of which is high can be manufactured by patterning and forming them.
|
申请公布号 |
US2003132498(A1) |
申请公布日期 |
2003.07.17 |
申请号 |
US20020193924 |
申请日期 |
2002.07.15 |
申请人 |
HITACHI, LTD. |
发明人 |
UEMATSU TSUYOSHI;TSUTSUI KEN;JOHGE TOSHIO |
分类号 |
H01L21/22;H01L21/00;H01L21/223;H01L21/225;H01L29/04;H01L31/036;H01L31/04;H01L31/18;(IPC1-7):H01L29/04 |
主分类号 |
H01L21/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|