发明名称 Photovoltaic device and making of the same
摘要 The prevention of the deterioration of the minority carrier lifetime of a semiconductor substrate can be achieved by patterning the material of an impurity diffusion protecting layer on the surface of a semiconductor substrate by a making except a thermal oxidation process of the semiconductor substrate, for example by printing and firing paste material or by depositing paste material using a mask by CVD and forming a diffusion layer in the shape of an inverted pattern of the impurity diffusion protecting layer. Also, a low-priced photovoltaic device the photo-electric conversion efficiency of which is high can be manufactured by patterning and forming them.
申请公布号 US2003132498(A1) 申请公布日期 2003.07.17
申请号 US20020193924 申请日期 2002.07.15
申请人 HITACHI, LTD. 发明人 UEMATSU TSUYOSHI;TSUTSUI KEN;JOHGE TOSHIO
分类号 H01L21/22;H01L21/00;H01L21/223;H01L21/225;H01L29/04;H01L31/036;H01L31/04;H01L31/18;(IPC1-7):H01L29/04 主分类号 H01L21/22
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