发明名称 Method and apparatus for plasma processing
摘要 The present invention provides a method and apparatus for processing substrates. A processing system includes a chamber having a top mounted pumping assembly. The chamber comprises a ceiling disposed on a chamber body and having an opening formed therein. The pumping assembly is connected to the ceiling and registered with the opening. The pumping assembly operates to evacuate the chamber to a desired pressure. One or more gases are supplied to the chamber via a gas distribution chamber and are exhausted from the chamber via the opening formed in the ceiling.
申请公布号 US6592709(B1) 申请公布日期 2003.07.15
申请号 US20000545744 申请日期 2000.04.05
申请人 APPLIED MATERIALS INC. 发明人 LUBOMIRSKY DMITRY
分类号 H01J37/32;(IPC1-7):H05H1/00;C23C16/00;H01J21/00 主分类号 H01J37/32
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