METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of preventing short and collapse of the capacitor by forming an inner and outer capacitor. CONSTITUTION: A nitride layer(13) and an oxide layer are sequentially formed on a lower layer(11). A cylinder is formed by selectively etching the oxide layer and the nitride layer. The first polysilicon layer(16) is formed on the cylinder. The first dielectric film(17) is formed on the first polysilicon layer. The second polysilicon layer(18) is then filled entirely into the cylinder, thereby forming an inner capacitor. After removing the oxide layer, the second dielectric film(20) and the third polysilicon layer(19) are sequentially formed, thereby forming an outer capacitor.