| 摘要 |
PURPOSE: A method for forming a fuse of a semiconductor device is provided to be capable of preventing the oxidation of a TiN layer used as a fuse layer in HAST(High Acceleration Stress Test). CONSTITUTION: A planarized insulating layer(41) is formed on a semiconductor substrate having a cell and peripheral region. A ferroelectric film(42) is formed on the insulating layer(41). A fuse layer(43) made of titanium nitride(TiN) and an anti-oxidation layer(44) are sequentially formed on the ferroelectric film. The anti-oxidation layer(44), the fuse layer(43) and the ferroelectric film(42) are firstly etched. The second etching is performed, wherein the etching speed of the fuse layer(43) is faster than that of the anti-oxidation layer(44).
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