| 摘要 |
PURPOSE: A method for forming an STI(Shallow Trench Isolation) of a semiconductor device is provided to be capable of minimizing the stress caused by STI processing. CONSTITUTION: The first and second insulating patterns(102,103) are sequentially formed on a semiconductor substrate(101). An insulating spacer(105a) is formed at both sidewalls of the first and second insulating patterns. A trench(106) is then formed by selectively etching the substrate by using the insulating spacer(105a) as a mask. After removing the insulating spacer(105a), an oxide layer grows on the trench by thermal oxidation processing. Then, an isolation region is formed by filling an insulating layer into the trench(106).
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