发明名称 Barrier cap for under bump metal
摘要 A semiconductor wafer having solder bumps thereon for use in flip-chip bonded integrated circuits comprises a semiconductor substrate formed with metal bond pads at selected locations thereon, a metal electroplating buss layer or layers over the bond pads, a layer of solder-wettable under bump metal on the buss layer, a layer of barrier metal which overlies and encapsulates the solder-wettable metal, and a solder bump formed on the barrier metal.
申请公布号 EP1267398(A3) 申请公布日期 2003.07.02
申请号 EP20020253338 申请日期 2002.05.14
申请人 ADVANCED INTERCONNECT TECHNOLOGY LTD. 发明人 CHOW, YEUNG MING;KARIM, ZAHEED SADRUDIN
分类号 H01L21/288;H01L21/60 主分类号 H01L21/288
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