发明名称 |
Barrier cap for under bump metal |
摘要 |
A semiconductor wafer having solder bumps thereon for use in flip-chip bonded integrated circuits comprises a semiconductor substrate formed with metal bond pads at selected locations thereon, a metal electroplating buss layer or layers over the bond pads, a layer of solder-wettable under bump metal on the buss layer, a layer of barrier metal which overlies and encapsulates the solder-wettable metal, and a solder bump formed on the barrier metal. |
申请公布号 |
EP1267398(A3) |
申请公布日期 |
2003.07.02 |
申请号 |
EP20020253338 |
申请日期 |
2002.05.14 |
申请人 |
ADVANCED INTERCONNECT TECHNOLOGY LTD. |
发明人 |
CHOW, YEUNG MING;KARIM, ZAHEED SADRUDIN |
分类号 |
H01L21/288;H01L21/60 |
主分类号 |
H01L21/288 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|