METHOD FOR MANUFACTURING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a contact hole of a semiconductor device is provided to be capable of simultaneously forming contact holes having different depths by previously implanting doped dopants into the predetermined portion of an interlayer dielectric. CONSTITUTION: After sequentially forming a wiring(102) and an interlayer dielectric(104) on the upper portion of a lower structure(100) of a semiconductor substrate, a planarization process is carried out on the resultant structure. One contact formation region having a deeper depth than that of the other contact formation region, is damaged by selectively implanting doped dopants into the interlayer dielectric. The contact holes are simultaneously completed by selectively etching the interlayer dielectric. Preferably, an oxide layer is used as the interlayer dielectric.