METHOD FOR PLANARIZING PRE-METAL DIELECTRIC

摘要

PURPOSE: A method for planarizing a pre-metal dielectric is provided to automatically determine an end point of a chemical mechanical polishing(CMP) process by depositing a plasma enhanced undoped silicate glass(PE-USG) oxide layer on a thin boron phosphorous silicate glass(BPSG) layer and by performing a CMP process on the PE-USG layer while using an end point detector(EPD) of a motor current type. CONSTITUTION: The BPSG layer(13) is deposited on a silicon wafer(11) having a metal oxide semiconductor(MOS) devide in a semiconductor device region. The BPSG layer is annealed and densified. The PE-USG oxide layer(14) is deposited on the BPSG layer. A CMP process is performed on the PE-USG oxide layer. The end point of the CMP process of the PE-USG oxide layer is determined by using the EPD of the motor current type.