发明名称 Microelectronic fabrication having microelectronic capacitor structure fabricated therein
摘要 Within a method for fabricating a microelectronic fabrication, and the microelectronic fabrication fabricated employing the method, there is formed within the microelectronic fabrication a capacitor structure upon a conductor stud layer formed into a first via defined by a patterned dielectric layer to reach a one of a pair of patterned conductor layers within the microelectronic fabrication prior to forming through the patterned dielectric layer a second via to reach the other of the pair of patterned conductor layers within the microelectronic fabrication. The method provides the resulting microelectronic fabrication with enhanced reliability and performance.
申请公布号 US6583491(B1) 申请公布日期 2003.06.24
申请号 US20020143162 申请日期 2002.05.09
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD 发明人 HUANG CHI-FENG;CHEN CHUN-HON
分类号 H01L21/02;H01L21/768;(IPC1-7):H01L29/00;H01L27/108 主分类号 H01L21/02
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