发明名称 |
Microelectronic fabrication having microelectronic capacitor structure fabricated therein |
摘要 |
Within a method for fabricating a microelectronic fabrication, and the microelectronic fabrication fabricated employing the method, there is formed within the microelectronic fabrication a capacitor structure upon a conductor stud layer formed into a first via defined by a patterned dielectric layer to reach a one of a pair of patterned conductor layers within the microelectronic fabrication prior to forming through the patterned dielectric layer a second via to reach the other of the pair of patterned conductor layers within the microelectronic fabrication. The method provides the resulting microelectronic fabrication with enhanced reliability and performance.
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申请公布号 |
US6583491(B1) |
申请公布日期 |
2003.06.24 |
申请号 |
US20020143162 |
申请日期 |
2002.05.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
HUANG CHI-FENG;CHEN CHUN-HON |
分类号 |
H01L21/02;H01L21/768;(IPC1-7):H01L29/00;H01L27/108 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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