METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To enlarge the surface area of a capacity storage electrode in order to increase the capacity of the capacitor of a semiconductor device for memory that is minute and highly integrated.

SOLUTION: Two or more layers of silicon oxide films having different impurity concentrations and fluorine contents are stacked as the spare layer of a capacity storage electrode 11 that is formed to a semiconductor device. An opening that is the predetermined zone of the spare layer removed selectively is provided to get etching treatment. The shape of bellows is formed on the sidewall surface of the opening due to the difference in the etching rate of the spare layer. After a conductive film is deposited on the sidewall surface of the opening to form the capacity storage electrode 11, the spare layer is removed. Moreover, a capacity insulator film 12 and a capacity counter-electrode 13 are formed to the capacity storage electrode 11. The surface of the cylindrical capacity storage electrode 11 can be formed into bellows without performing high-temperature heat treatment, and the surface area is enlarged to increase the capacity of the capacitor.

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