| 摘要 |
<p>The invention relates to a process of forming a bipolar junction transistor (BJT) that includes forming a topology over a substrate (112). Thereafter, a spacer (136) is formed at the topology. A base layer (140) is formed from epitaxial silicon above the spacer (136) and at the topology. A leakage block (158) is formed in the substrate by out-diffusion from the spacer (136). Thereafter a BJT is completed with the base layer (140) and the spacer (136).</p> |
