发明名称 Magnetic random access memory and method of operating the same
摘要 A magnetic random access memory using magnetic domain drag is provided. The magnetic random access memory includes a data storage unit including a fixed layer, a non-magnetic layer, and a free layer; a data input unit electrically connected to both ends of the free layer, for applying current to the free layer to input data into the data storage unit; and a data output unit electrically connected to the free layer and the fixed layer to output data stored in the data storage unit. Accordingly, the magnetic random access memory has more excellent performance than that using a switching field to record data. <IMAGE>
申请公布号 EP1320102(A2) 申请公布日期 2003.06.18
申请号 EP20020255748 申请日期 2002.08.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, WAN-JUN;KIM, TAE-WAN;SONG, I-HUN;PARK, SANG-JIN;GAMBINO, RICHARD J.
分类号 G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/15 主分类号 G11C11/15
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