发明名称 |
GROWING CHAMBER OF SILICON INGOT HAVING SMALL DIAMETER |
摘要 |
PURPOSE: A growing chamber of silicon ingot having a small diameter is provided to be capable of quickly cooling a high temperature silicon ingot to room temperature by using a cooling part. CONSTITUTION: A quartz crucible(114) storing silicon melt is located in a chamber main frame(110). The quartz crucible is surrounded with heater(118) and a heat shielding part(120). A pull-up driving part(122) is installed on the upper portion of the quartz crucible for growing a seed crystal connected with a wire(124) to silicon ingot with a small diameter by rotating and pulling up the seed crystal using the wire. A cooling part(130) is installed on the pull-up path of the silicon ingot for cooling the silicon ingot while growing the silicon ingot. Preferably, a water cooling tube is used as the cooling part. Preferably, a purge gas jetting ring(140) is installed at the outer peripheral portion of the cooling part.
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申请公布号 |
KR20030046718(A) |
申请公布日期 |
2003.06.18 |
申请号 |
KR20010076947 |
申请日期 |
2001.12.06 |
申请人 |
SILTRON INC. |
发明人 |
EOM, IL SU;NA, GWANG HA;PARK, JIN TAEK;SHIN, HYEON GU |
分类号 |
C30B15/10;(IPC1-7):C30B15/10 |
主分类号 |
C30B15/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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