| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma-assisted sputtering method for forming a thin film, which deposits a large area of crystallized and highly dense thin-film on a substrate, and to provide a film-forming apparatus. SOLUTION: This method comprises arranging several pairs of microwave antennas, vertically to the travelling direction of the substrate to be thin-film- deposited, namely on both the transverse sides of the substrate, in the plasma sputtering apparatus using magnetron, and irradiating the substrate surface with microwave from both transverse sides of the substrate, to form assisted plasma in proximity to the substrate surface; and arranging a set of magnets consisting of several magnets beneath the substrate, forming an arched mirror magnetic field for confining plasma, in a region where the assisted plasma is to be formed in proximity to the substrate surface, vibrating the set of magnets in a transverse direction of the substrate, enhancing effective strength of the arched magnetic field above the substrate surface, and achieving uniformity of the assisted plasma in the transverse direction of the substrate, all over the surface of a large area. COPYRIGHT: (C)2003,JPO
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