发明名称 SURFACE WAVE DEVICE AND COMMUNICATION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a surface wave device having small variation in sound velocity with respect to a film thickness, in which an attenuation constant is nearly equal to zero in the step when an electrode is formed on a piezoelectric substrate. SOLUTION: An IDT is composed of an electrode material having a larger mass density than 7 g/cm<SP>3</SP>, including at least one of main components, i.e., Au, W, Ta, Ag, Mo, Cu, Ni, Cr, and Zn, on a crystal substrate having an Euler angle (0°, 121°≤θ≤136°, 90°±5°), and an SH wave is excited. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003163574(A) 申请公布日期 2003.06.06
申请号 JP20020308749 申请日期 2002.10.23
申请人 MURATA MFG CO LTD 发明人 KADOTA MICHIO;YONEDA TOSHIMARO;FUJIMOTO KOJI
分类号 H03H9/25;H03H9/145;(IPC1-7):H03H9/25 主分类号 H03H9/25
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