发明名称 Vorrichtung und Verfahren zum Wachsen von Schichten auf ein Substrat
摘要 The device for growing layers on a wafer comprises a reactor housing (10), a susceptor (12), which is placed inside the reactor housing and provided for accommodating one or more substrates (14), and comprises a fluid admission device (18) for admitting reaction fluids into the reactor housing as well as a fluid outlet device (20a, 20b) for removing the reaction fluids from the reactor housing once these have been guided over the surface to be coated of the substrate(s). According to the invention, the fluid admission device (18) has fluid outlet openings, which are located along the periphery of the susceptor (12), and the fluid outlet device (20a, 20b) has at least one fluid admission opening, which is located in the middle of the susceptor (12) so that the reaction fluids passed through the fluid outlet openings of the fluid admission device flow radially inward from the periphery of the susceptor (12) over the surface to be coated of the substrate(s) (14) and are removed by suction by the fluid admission opening of the fluid outlet device.
申请公布号 DE10157946(A1) 申请公布日期 2003.06.05
申请号 DE20011057946 申请日期 2001.11.27
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 WECHSELBERGER, BERND
分类号 C23C16/44;C23C16/455;C30B25/14;H01L21/00;(IPC1-7):C23C16/455;C30B25/00 主分类号 C23C16/44
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