发明名称 |
Semiconductor device with a self-aligned contact and a method of manufacturing the same |
摘要 |
A semiconductor device having a self-aligned contact and a method for forming the same, including a semiconductor substrate having a self-aligned contact region and a non-self-aligned contact region; a self-aligned contact exposing a portion of the self-aligned contact region; a first insulating layer formed on the semiconductor substrate that exposes the self-aligned contact; conductive patterns formed on the first insulating layer and spaced apart from each other; spacers formed on sidewalls of each of the conductive patterns; a second insulating layer formed over the first insulating layer that exposes the self-aligned contact; a third insulating layer formed between the second insulating layer and the spacer; a fourth insulating layer formed over the non-self-aligned contact region and on sidewalls of the spacers over the self-aligned contact region; and a fifth insulating layer formed on a portion of the fourth insulating layer over the non-self-aligned contact region.
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申请公布号 |
US6573602(B2) |
申请公布日期 |
2003.06.03 |
申请号 |
US20020193091 |
申请日期 |
2002.07.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEO JUN;AHN TAE-HYUK;KIM MYEONG-CHEOL |
分类号 |
H01L21/28;H01L21/60;H01L23/485;(IPC1-7):H01L2/302 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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