发明名称 |
Quantum semiconductor device including quantum dots and a fabrication process thereof |
摘要 |
A quantum semiconductor device includes intermediate layers of a first semiconductor crystal having a first lattice constant and stacked repeatedly, and a plurality of quantum dots of a second semiconductor crystal having a second lattice constant different from the first lattice constant. The quantum dots are dispersed in each of the intermediate layers and form a strained heteroepitaxial system with respect to the corresponding intermediate layer. Each of the quantum dots has a height substantially identical with a thickness of the corresponding intermediate layer.
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申请公布号 |
US6573527(B1) |
申请公布日期 |
2003.06.03 |
申请号 |
US19960753598 |
申请日期 |
1996.11.27 |
申请人 |
FUJITSU LIMITED |
发明人 |
SUGIYAMA YOSHIHIRO;NAKATA YOSHIAKI |
分类号 |
H01L29/68;H01L29/06;H01L29/12;H01L29/66;H01L29/737;H01L29/88;H01L33/06;H01L33/10;H01L33/16;H01L33/30;H01S5/00;H01S5/183;H01S5/323;H01S5/34;(IPC1-7):H01L29/06 |
主分类号 |
H01L29/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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