| 摘要 |
A field effect transistor contains a gate stack with a first layer, preferably a polysilicon layer, on a gate oxide disposed on a substrate, and over the first layer, a second layer, preferably a silicide layer, is provided. Next to the gate electrode is a contact that is separated from the layers of the gate electrode by a layer containing silicon and a spacer layer. Therefore a recrystallization in the silicide layer at elevated temperatures is prevented, which would otherwise cause bulging of the silicide layer toward the contact. It thus prevents shorts between the gate electrode and the contact.
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