| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor device suitable for mass production, without having to increase crystal defects and which is capable of carrying out gettering with better gettering effect. SOLUTION: A silicon oxide film at least on the device active region of a semiconductor wafer 1 is removed. Then, a polysilicon film 7 is formed at least on the device active region. Then, the wafer 1, on which the polysilicon film 7 is formed, is subjected to heat treatment. At this point, the gettering effect is auxiliarily enhanced. Then, the polysilicon film 7 is oxidized into a silicon oxide film. Due to this oxidation, hevy metal impurities on the wafer surface are captured by the silicon oxide film, to exhibit gettering effect. Thereafter, this silicon oxide film is removed through etching.
|
