| 摘要 |
The disclosed method provides a method capable of removing dangling bonds generated on a surface of photodiode. The method includes steps of: forming a photodiode in a semiconductor substrate; forming a transfer transistor, a reset transistor, a drive transistor and a select transistor on the semiconductor substrate; forming a first interlayer insulating layer on the semiconductor substrate, wherein the first interlayer insulating layer contains hydrogen ions; forming a second interlayer insulating layer on the first interlayer insulating layer; and flattening the second interlayer insulating layer by flowing and simultaneously diffusing the hydrogen ions into a surface of the photodiode.
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