| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemically amplified photoresist which exhibits excellent sensitivity and resolution and gives a pattern having a good section shape when a fine resist pattern of 0.15-0.22 μm is formed using a KrF excimer laser. SOLUTION: In the chemically amplified photoresist comprising (A) a resin whose alkali solubility is increased by an acid and (B) an acid generator which generates an acid upon irradiation with radiation, the component (A) is a mixture of two copolymers each comprising 50-85 mol% hydroxyl-containing styrene units, 15-35 mol% styrene units and 2-20 mol% units of the tertiary butyl ester of acrylic acid or methacrylic acid and the tertiary butyl ester unit content of one of the copolymers is 2-8 mol%. |
