发明名称 |
Semiconductor memory device, has refresh request generating circuit with operating speed determined by reference voltage generated by reference voltage generating circuit |
摘要 |
The device uses bias voltage with positive temperature given by a bias circuit (1) and reference voltage generating circuit that is dependant on temperature for giving a reference voltage. A refresh request generating circuit (2) with an operating speed determined by the reference voltage. This circuit performs an oscillation operation and issues a refresh request for a number of times when oscillation is activated.
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申请公布号 |
DE10234142(A1) |
申请公布日期 |
2003.05.15 |
申请号 |
DE20021034142 |
申请日期 |
2002.07.26 |
申请人 |
MITSUBISHI DENKI K.K., TOKIO/TOKYO |
发明人 |
YAMAUCHI, TADAAKI;OKAMOTO, TAKEO;MATSUMOTO, JUNKO |
分类号 |
G05F3/24;G11C7/04;G11C11/406;G11C11/407;(IPC1-7):G11C11/406 |
主分类号 |
G05F3/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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