| 摘要 |
In a lithography process in the fabrication of a semiconductor device, a resist liquid is sprayed onto a substrate having vias with an aspect ratio of at least 1 while spinning the substrate at a constant speed of rotation. The substrate is then rotated for a prescribed time at a speed of rotation that is less than the speed of rotation during spraying, whereby the fill factor in vias and the state of coating at via edges are adjusted. After undergoing this step, the substrate is rotated at a speed of rotation that is greater than the speed of rotation during spraying to determine the film thickness.
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